How to Draw Perpendicular Bisector for a Triangle

$1\times$ - to $2\times$ -nm perpendicular MTJ Switching at Sub-3-ns Pulses Below $100~\mu$ A for High-Performance Embedded STT-MRAM for Sub-20-nm CMOS

Abstract: Magnetization switching is confirmed for sub-3-ns pulses below 100 μA in perpendicular magnetic tunnel junctions (MTJs) down to 16 nm in diameter. The magnetoresistance ratio exceeded 150%, ...

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$1\times$ - to $2\times$ -nm perpendicular MTJ Switching at Sub-3-ns Pulses Below $100~\mu$ A for High-Performance Embedded STT-MRAM for Sub-20-nm CMOS

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